DMN3112S document number: ds31445 rev. 2 - 2 1 of 4 www.diodes.com july 2008 ? diodes incorporated DMN3112S new product n-channel enhancement mode fi eld effect transistor features ? low on-resistance: 57m ? @ v gs = 10v 112m ? @ v gs = 4.5v ? low gate threshold voltage ? low input capacitance ? fast switching speed ? low input/output leakage ? lead free by design/rohs compliant (note 2) ? "green" device (note 3) ? qualified to aec-q101 standards for high reliability mechanical data ? case: sot-23 ? case material: molded plasti c, ?green? molding compound. ul flammability classification rating 94v-0 ? moisture sensitivity: level 1 per j-std-020d ? terminals: finish ? matte tin annealed over copper leadframe. solderable per mil-std-202, method 208 ? terminal connecti ons: see diagram ? marking information: see page 4 ? ordering information: see page 4 ? weight: 0.008 grams (approximate) maximum ratings @t a = 25c unless otherwise specified sot-23 top view source gate drai n equivalent circuit d g s top view characteristic symbol value unit drain source voltage v dss 30 v gate-source voltage v gss 20 v drain current (note 1) t a = 25c t a = 70c i d 5.8 4.2 a drain current (note 1) pulsed i dm 20 a body-diode continuous current (note 1) i s 2.0 a thermal characteristics characteristic symbol value unit total power dissipation (note 1) p d 1.4 w thermal resistance, junction to ambient @t a = 25c (note 1) r ja 90 c/w operating and storage temperature range t j, t stg -55 to +150 c electrical characteristics @t a = 25c unless otherwise specified characteristic symbol min typ max unit test condition off characteristics (note 4) drain-source breakdown voltage bv dss 30 ? ? v v gs = 0v, i d = 250 a zero gate voltage drain current i dss ? ? 800 na v ds = 30v, v gs = 0v gate-body leakage i gss ? ? 80 800 na v gs = 20v, v ds = 0v v gs = 25v, v ds = 0v on characteristics (note 4) gate threshold voltage v gs(th) 1.3 1.9 2.2 v v ds = v gs , i d = 250 a static drain-source on-resistance r ds (on) ? ? 47 92 57 112 m v gs = 10v, i d = 5.8a v gs = 4.5v, i d = 4.2a forward transconductance |y fs | ? 4.7 ? s v ds = 5v, i d = 4.2a source-drain diode forward voltage v sd ? 0.78 1.1 v v gs = 0v, i s = 2.0a dynamic characteristics input capacitance c iss ? 268 ? pf output capacitance c oss ? 73 ? pf reverse transfer capacitance c rss ? 50 ? pf v ds = 5v, v gs = 0v f = 1.0mhz notes: 1. device mounted on fr-4 pcb. t 5 sec. 2. no purposefully added lead. 3. diodes inc.'s "green" policy can be found on our website at http:// www.di odes.com/products/l ead_free/index.php. 4. short duration pulse test used to minimize self-heating effect.
DMN3112S 0 2 4 6 8 10 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 fig. 1 typical output characteristic v , drain-source voltage (v) ds i, d r ai n c u r r e n t (a) d v = 2.5v gs v = 3.0v gs v = 3.5v gs v = 4.0v gs v = 4.5v gs v = 10v gs fig. 2 typical transfer characteristic 0 2 4 6 8 10 12 34 v , gate-source voltage (v) gs i, d 5 r ai n c u r r e n t (a) d t = -55c a t = 25c a t = 85c a t = 125c a t = 150c a 0.01 0.1 1 04 81216 fig. 3 typical on-resistance vs. drain current and gate voltage i , drain-source current (a) d r , drain-source on-resistance ( ) ds(on) new product 20 v = 4.5v gs v = 10v gs 0 0.04 0.08 0.12 0.16 0.20 0.24 0.28 0.32 02 4 6 8 i , drain current (a) d fig. 4 typical on-resistance vs. drain current and temperature 10 r , d r ain-s o u r c e o n- r esis t an c e ( ) ds(on) t = -55c a t = 25c a t = 85c a t = 125c a t = 150c a v = 4.5v gs fig. 5 on-resistance variation with temperature 0.6 0.8 1.0 1.2 1.4 1.6 -50 -25 0 25 50 75 100 125 150 t , ambient temperature (c) a r , drain-source on-resistance (normalized) dson v = 4.5v i = 5a gs d v = 10v i = 10a gs d fig. 6 on-resistance variation with temperature 0 0.02 0.04 0.06 0.08 0.10 0.12 0.14 -50 -25 0 25 50 75 100 125 150 t , ambient temperature (c) a r , drain-source on-resistance ( ) dson v = 4.5v i = 5a gs d v = 10v i = 10a gs d DMN3112S document number: ds31445 rev. 2 - 2 2 of 4 www.diodes.com july 2008 ? diodes incorporated
DMN3112S fig. 7 gate threshold variation vs. ambient temperature -50 -25 0 25 50 75 100 125 150 t , ambient temperature (c) a 0 0.4 0.8 1.2 1.6 2.0 2.4 v, g a t e t h r es h o ld v o l t a g e (v) gs(th) i = 250a d i = 1ma d 0 2 4 6 8 10 i, s o u r c e c u r r en t (a) s fig. 8 diode forward voltage vs. current 0 0.2 0.4 0.6 0.8 1 1.2 v , source-drain voltage (v) sd t = 25c a fig. 9 typical total capacitance 10 100 1,000 0 5 10 15 20 25 30 v , drain-source voltage (v) ds c , c a p a c i t a n c e (p f ) c iss c oss c rss r (t ) , t r ans i en t t h e r mal r es i s t an c e fig. 10 transient thermal response t , pulse duration time (s) 1 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000 t - t = p * r (t) duty cycle, d = t /t ja ja 12 r (t) = r(t) * r r = 168c/w ? ja ja ja p(pk) t 1 t 2 d = 0.7 d = 0.5 d = 0.3 d = 0.1 d = 0.05 d = 0.02 d = 0.01 d = 0.005 d = single pulse d = 0.9 new product DMN3112S document number: ds31445 rev. 2 - 2 3 of 4 www.diodes.com july 2008 ? diodes incorporated
DMN3112S document number: ds31445 rev. 2 - 2 4 of 4 www.diodes.com july 2008 ? diodes incorporated DMN3112S ordering information (note 5) part number case packaging DMN3112S-7 sot-23 3000/tape & reel notes: 5. for packaging deta ils, go to our website at http://www.di odes.com/datasheets/ap02007.pdf . marking information new product mn4 ym mn4 = product type marking code ym = date code marking y = year (ex: v = 2008) m = month (ex: 9 = september) date code key year 2008 2009 2010 2011 2012 2013 2014 2015 code v w x y z a b c month jan feb mar apr may jun jul aug sep oct nov dec code 1 2 3 4 5 6 7 8 9 o n d package outline dimensions suggested pad layout important notice diodes incorporated and its subsidiaries rese rve the right to make modifications, enhancements, improvements, corrections or ot her changes without further notice to any product herein. diodes incorporat ed does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the ri ghts of others. the user of products in such applications shall assume all risks of such use and will agree to hold diodes inco rporated and all the companies whose products are represented on our website, harmless against all damages. life support diodes incorporated products are not authoriz ed for use as critical components in life support devices or systems without the e xpressed written approval of the president of diodes incorporated. a m j l d f b c h k g k1 sot-23 dim min max typ a 0.37 0.51 0.40 b 1.20 1.40 1.30 c 2.30 2.50 2.40 d 0.89 1.03 0.915 f 0.45 0.60 0.535 g 1.78 2.05 1.83 h 2.80 3.00 2.90 j 0.013 0.10 0.05 k 0.903 1.10 1.00 k1 - - 0.400 l 0.45 0.61 0.55 m 0.085 0.18 0.11 0 8 - all dimensions in mm x e y c z dimensions value (in mm) z 2.9 x 0.8 y 0.9 c 2.0 e 1.35
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